shipping 3000/tape&reel sesd5l5.0t1 ordering information device marking 5l the sesd5l is designed to protect voltage sensitive components that require ultra ?low capacitance from esd and transient voltage events. excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for esd protection on designs where board space is at a premium. because of its low capacitance, it is suited for use in high frequency designs such as usb 2.0 high speed and antenna line applications. specification features: ? ultra low capacitance 0.5 pf ? low clamping voltage ? small body outline dimensions: 0.047 x 0.032 (1.20 mm x 0.80 mm) ? low body height: 0.024 (0.6 mm) ? stand? off voltage: 5 v ? low leakage ? response time is typically < 1.0 ns ? iec61000? 4 ? 2 level 4 esd protection ? this is a pb? free device mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic epoxy meets ul 94 v ? 0 lead finish: 100% matte sn (tin) qualified max reflow temperature: device meets msl 1 requirements pin 1. cathode 2. anode 12 maximum ratings rating symbol value unit iec 61000 ? 4 ? 2 (esd) contact air 10 15 kv total power dissipation on fr ? 5 board (note 1) @ t a = 25 c p d 200 mw storage temperature range t stg ? 55 to +150 c junction temperature range t j ? 55 to +125 c lead solder temperature ? maximum (10 second duration) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ?5 = 1.0 x 0.75 x 0.62 in. 260 c sodC 523 2 1 peak pulse current i pp peak power dissipation p pk 8 x 20 sec. 8 x 20 sec. 5(max) 50(max) a w willas electronic corp. 2012-09 ? esd protection diodes with ultra ? low capacitance sesd5l5.0t1
electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f p pk peak power dissipation c capacitance @ v r = 0 and f = 1.0 mhz *see application note and8308/d for detailed explanations of datasheet parameters. uni?directional tvs i pp i f v i i r i t v rwm v c v br v f electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.0 v max. @ i f = 10 ma for all types) device device marking v rwm (v) i r ( a) @ v rwm v br (v) @ i t (note 2) i t c (pf) v c (v) @ i pp = 1 a (note 3) v c max max min ma typ max max per iec61000 ? 4 ? 2 (note 4) esd5l5.0t1 5l 5.0 1.0 5.4 1.0 0.5 0.9 9.8 figures 1 and 2 see below 2. v br is measured with a pulse test current i t at an ambient temperature of 25 c. 3. surge current waveform per figure 5. 4. for test procedure see figures 3 and 4 and application note and8307/d. figure 1. esd clamping voltage screenshot positive 8 kv contact per iec61000 ?4?2 figure 2. esd clamping voltage screenshot negative 8 kv contact per iec61000 ?4?2 s willas electronic corp. 2012-09 esd protection diodes with ultra ? low capacitance sesd5l5.0t1
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sod?523 0.40 0.0157 0.40 0.0157 1.40 0.0547 mm inches scale 10:1 soldering footprint* willas electronic corp. 2012-09 esd protection diodes with ultra ? low capacitance sesd5l5.0t1 .043(1.10) .051(1.30) .035(0.90) .028(0.70) .067(1.70) .059(1.50) .028(0.70) .020(0.50) .014(0.35) .009(0.25) .008(0.20) .002(0.05) dimensions in inches and (millimeters)
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